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Investigators from the Consejo Superior de Investigaciones Científicas (CSIC) and the University of Las Palmas de Gran Canaria and California (USA) have discovered a molecular mechanism involved in the development of autoimmune diseases like lupus. These are the receptors LXR (Liver X Receptors) that regulate the removal of the remains of dead cells by apoptosis, a process that, when it fails, it causes inflammation of surrounding tissue and the body's immune response. The research, conducted with mice, opens the door to the use of these receptors as therapeutic targets for these diseases.

Antonio Castrillo, CSIC researcher at the Institute for Biomedical Research (Joint CSIC and Universidad Autónoma de Madrid) and director of research, explains: "The research in mice has shown that in the absence of these receptors, the process of removal of dead cells is severely compromised. "According to the research, these receptors, proteins residing in the cell nucleus and known so far for its role in cholesterol metabolism, regulate the expression of an important gene involved in removal of cellular debris.

Investigators from the Consejo Superior de Investigaciones Científicas (CSIC) and the University of Las Palmas de Gran Canaria and California (USA) have discovered a molecular mechanism involved in the development of autoimmune diseases like lupus. These are the receptors LXR (Liver X Receptors) that regulate the removal of the remains of dead cells by apoptosis, a process that, when it fails, it causes inflammation of surrounding tissue and the body's immune response. The research, conducted with mice, opens the door to the use of these receptors as therapeutic targets for these diseases.

Antonio Castrillo, CSIC researcher at the Institute for Biomedical Research (Joint CSIC and Universidad Autónoma de Madrid) and director of research, explains: "The research in mice has shown that in the absence of these receptors, the process of removal of dead cells is severely compromised. "According to the research, these receptors, proteins residing in the cell nucleus and known so far for its role in cholesterol metabolism, regulate the expression of an important gene involved in removal of cellular debris.

For over 60 years, a giant family-owned food manufacturing has specialized in tomato products "authentic Italian, fresh packaged for use in Italian restaurants and pizzerias throughout North America. The products, which include spaghetti sauce, puree, pizza sauces and sauce bases, are only available to restaurateurs through food service distributors. To meet the challenge of making tomato-based products high quality, technology Moisture Analyzer from METTLER TOLEDO was superior, contributing an accurate and streamlined method for analyzing the moisture of the products.

The relentless commitment to producing the highest quality products made ​​out to the food business including manufacturers of placing tomato as the brand leader in the exclusive food service niche it occupies. To maintain the quality of

For over 60 years, a giant family-owned food manufacturing has specialized in tomato products "authentic Italian, fresh packaged for use in Italian restaurants and pizzerias throughout North America. The products, which include spaghetti sauce, puree, pizza sauces and sauce bases, are only available to restaurateurs through food service distributors. To meet the challenge of making tomato-based products high quality, technology Moisture Analyzer from METTLER TOLEDO was superior, contributing an accurate and streamlined method for analyzing the moisture of the products.

The relentless commitment to producing the highest quality products made ​​out to the food business including manufacturers of placing tomato as the brand leader in the exclusive food service niche it occupies. To maintain the quality of

Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon was the predominant radical formed for wire temperatures above 1500 K, and catalysis was evident for SiH3 production with the use of a new wire. Aged wires appear to produce radicals by a non-catalyzed route and chemical analysis of these wires reveal large quantities of silicon at the surface, consistent with the presence of a silicide layer. This study is the first of its kind to correlate radical desorption kinetics with filament aging for the hot-wire chemical vapor deposition technique.

Threshold ionization mass spectrometry revealed large quantities of the SiH2 radical, attributed to heterogeneous pyrolysis on the walls of the reactor. At dilute (1%) silane pressures of up to 2 Torr, a negligible amount of ions and silicon agglomerates (Si2, Si2H, Si2H6) were detected. Density functional theory calculations reveal an energetically favorable route for the reaction of Si and SiH4, producing Si2H2 and H2. The trace amounts of Si2H2 observed experimentally, however, may suggest that an intermediate spin state transition involved in this reaction is slow under the hot-wire conditions used. Monte Carlo simulations of the hot-wire reactor suggest SiH3 is the predominant growth species under conditions leading to amorphous and polycrystalline growth. The flux of atomic hydrogen, rather than the identity of the precursor, appears to be the more important factor in governing the amorphous-to-microcrystalline transition that occurs upon hydrogen-dilution. Two-dimensional Monte Carlo simulations were used to model a hot-wire reactor for the first time, showing that filament arrays can be used to improve film growth uniformity. Under conditions where agglomerate formation does not occur, continuum simulations predict a maximum growth rate of 10 nm/s for dilute (1%) silane conditions and a rate of 50 nm/s for pure silane.

Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon was the predominant radical formed for wire temperatures above 1500 K, and catalysis was evident for SiH3 production with the use of a new wire. Aged wires appear to produce radicals by a non-catalyzed route and chemical analysis of these wires reveal large quantities of silicon at the surface, consistent with the presence of a silicide layer. This study is the first of its kind to correlate radical desorption kinetics with filament aging for the hot-wire chemical vapor deposition technique.

Threshold ionization mass spectrometry revealed large quantities of the SiH2 radical, attributed to heterogeneous pyrolysis on the walls of the reactor. At dilute (1%) silane pressures of up to 2 Torr, a negligible amount of ions and silicon agglomerates (Si2, Si2H, Si2H6) were detected. Density functional theory calculations reveal an energetically favorable route for the reaction of Si and SiH4, producing Si2H2 and H2. The trace amounts of Si2H2 observed experimentally, however, may suggest that an intermediate spin state transition involved in this reaction is slow under the hot-wire conditions used. Monte Carlo simulations of the hot-wire reactor suggest SiH3 is the predominant growth species under conditions leading to amorphous and polycrystalline growth. The flux of atomic hydrogen, rather than the identity of the precursor, appears to be the more important factor in governing the amorphous-to-microcrystalline transition that occurs upon hydrogen-dilution. Two-dimensional Monte Carlo simulations were used to model a hot-wire reactor for the first time, showing that filament arrays can be used to improve film growth uniformity. Under conditions where agglomerate formation does not occur, continuum simulations predict a maximum growth rate of 10 nm/s for dilute (1%) silane conditions and a rate of 50 nm/s for pure silane.